Browsing by Subject "Indium arsenide"
Now showing items 1-3 of 3
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Article
Current transport in semiconductor nanowires with built-in barriers based on a 1D transfer matrix calculation
(2008)A one dimensional (1D) transfer matrix calculation of current transport in semiconductor nanowires with built-in barriers is described within the effective mass approximation by taking into account (i) the quantum confinement ...
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Article
InAs quantum dots grown by molecular beam epitaxy on GaAs (211)B polar substrates
(2006)InAs nanostructures were grown by molecular beam epitaxy on GaAs (211)B at temperatures between 400-530 °C and growth rates that were varied between 0.1 to 0.02 mono-layers (ML) per second. For temperatures up to 500 °C ...
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Article
Low-temperature growth of NiMnSb thin films by pulsed-laser deposition
(2002)We report the growth of thin films of the ferromagnetic half-Heusler alloy NiMnSb by pulsed-laser deposition on Si (111) and polycrystalline InAs substrates. Highly crystalline films are grown using low substrate temperatures ...